| PART |
Description |
Maker |
| PE15A1008 |
23 dBm IP3, 1.6 dB NF, 13 dBm, 20 MHz to 3 GHz, Low Noise Amplifier
|
Pasternack Enterprises, Inc.
|
| HMC478MP86 |
SiGe HBT GAIN BLOCK MMIC AMPLIFIE /DC - 4.0 GHz
|
Hittite Microwave Corporation
|
| HMC478SC70 |
SiGe HBT GAIN BLOCK MMIC AMPLIFIE /DC - 4 GHz
|
Hittite Microwave Corporation
|
| TIM1414-7-252 |
HIGH POWER P1dB=38.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
| BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
|
Siemens Semiconductor Group
|
| TA010-020-15-15 |
1.0 - 2.0 GHz 15 dBm Amplifier
|
Transcom, Inc.
|
| TA160-180-25-27 |
16 - 18 GHz 27 dBm Amplifier
|
Transcom, Inc.
|
| TM005-020-14-14 |
0.5 - 2 GHz 14 dBm Module
|
Transcom, Inc.
|
| TM005-020-12-24 |
0.5 - 2 GHz 24 dBm Module
|
Transcom, Inc.
|
| TA005-025-10-24 |
0.5 - 2.5 GHz 24 dBm Amplifier
|
Transcom, Inc.
|
| TA165-182-32-32 |
16.5 - 18.2 GHz 32 dBm Amplifier
|
Transcom, Inc.
|
